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By Chuan Seng Tan, Kuan-Neng Chen, Visit Amazon's Steven J. Koester Page, search results, Learn about Author Central, Steven J. Koester,
Three-dimensional (3D) integration is pointed out as a potential street for non-stop functionality progress in built-in circuits (IC) because the traditional scaling technique is confronted with extraordinary demanding situations in basic and financial limits. Wafer point 3D IC can take a number of varieties, and so they often comprise a stack of a number of thinned IC layers which are vertically bonded and interconnected through via silicon through TSV.
There is a protracted string of advantages that one could derive from 3D IC implementation resembling shape issue, density multiplication, stronger hold up and tool, improved bandwidth, and heterogeneous integration. This booklet provides contributions by means of key researchers during this box, overlaying motivations, know-how structures, functions, and different layout concerns.
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Extra info for 3D Integration for VLSI Systems
Singh, X. F. Ang, J. Wei, C. M. Ng, and C. S. Tan, “Achieving low temperature Cu to Cu diffusion bonding with self assembly monolayer (SAM) passivation,” IEEE International Conference on 3D System Integration, art. no. 5306545, 2009. 75in 280711-ch01 26 3D Integration Technology - Introduction and Overview 43. D. F. Lim, S. G. F. Ang, J. Wei, C. M. Ng, and C. S. Tan, “Application of self assembly monolayer (SAM) in Cu-Cu bonding enhancement at low temperature for 3-D integration,” Advanced Metallization Conference, Baltimore, October 13-15, 2009.
Chen, A. Fan and R. Reif, “The effect of forming gas anneal on the oxygen content in bonded Cu layer,” Journal of Electronic Materials, 34(12), pp 1598-1602, 2005. 75in 280711-ch01 References 30. K. N. Chen, A. Fan, C. S. Tan, and R. Reif, “Temperature and duration effect on microstructure evolution during copper wafer bonding,” Journal of Electronic Materials, 32(12), pp. 1371-1374, 2003. 31. K. N. Chen, C. S. Tan, A. Fan, and R. Reif, “Morphology and bond strength of copper wafer bonding,” Electrochemical and Solid-State Letters, 7(1), pp G14-G16, 2004.
N. , “Capacitive and Inductive-Coupling I/Os for 3D chips,” In: Integrated Interconnect Technologies for 3D Nanoelectronic Systems (Edited by M. S. Bakir and J. D. Meindl), Artech House, p. 449, 2009. 18. S. Kawamura, N. Sasaki, T. Iwai, M. Nakano, and M. Takagi, “Three-dimensional CMOS ICs fabricated by using beal recrystallization,” IEEE Electron Device Letters, 4(10), p. 366, 1983. 19. T. Kunio, K. Oyama, Y. Hayashi, and M. Morimoto, “Three Dimensional ICs, Having Four Stacked Active Device Layers,” In: IEDM Technical Digest, pp.
3D Integration for VLSI Systems by Chuan Seng Tan, Kuan-Neng Chen, Visit Amazon's Steven J. Koester Page, search results, Learn about Author Central, Steven J. Koester,